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* Reverse Biased SOA with Inductive Loads @ TC = 100_C * Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1 A, 100_C is 290 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information. These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES:
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
SWITCHMODE Series NPN Silicon Power Transistors
Designer'sTM Data Sheet
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 4 Maximum Load Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Emitter Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating
v 10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VEBO
VCEV
RJC
RJA
IC ICM
IE IEM
IB IBM
PD
PD
TL
MJE13002
600
300
- 65 to + 150
3.12
Max
2.25 4.5
0.75 1.5
1.4 11.2
40 320
275
1.5 3
89
9
MJE13002 * MJE13003 *
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS
MJE13003
*Motorola Preferred Device
700
400
CASE 77-08 TO-225AA TYPE
Order this document by MJE13002/D
Watts mW/_C
Watts mW/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
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MJE13002 MJE13003
(1) Pulse Test: PW = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS (1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Crossover Time
Storage Time
Inductive Load, Clamped (Table 1, Figure 13)
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table 1)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Current-Gain -- Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz)
Base-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.1 Adc) (IC = 1 Adc, IB = 0.25 Adc) (IC = 1 Adc, IB = 0.25 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.1 Adc) (IC = 1 Adc, IB = 0.25 Adc) (IC = 1.5 Adc, IB = 0.5 Adc) (IC = 1 Adc, IB = 0.25 Adc, TC = 100_C)
DC Current Gain (IC = 0.5 Adc, VCE = 2 Vdc) (IC = 1 Adc, VCE = 2 Vdc)
Clamped Inductive SOA with base reverse biased
Second Breakdown Collector Current with bass forward biased
Emitter Cutoff Current (VEB = 9 Vdc, IC = 0)
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0)
2
(IC = 1 A, Vclamp = 300 Vdc, IB1 = 0.2 A, VBE(off) = 5 Vdc, TC = 100_C) (VCC = 125 Vdc, IC = 1 A, IB1 = IB2 = 0.2 A, tp = 25 s, Duty Cycle 1%) Characteristic
v 2%.
v
MJE13002 MJE13003
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
IEBO ICEV Cob hFE IS/b tsv fT td tfi tr tf tc ts Min 300 400 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4 8 5 See Figure 12 See Figure 11 0.15 0.29 0.05 Typ 1.7 0.4 0.5 21 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2 0.75 Max 0.7 0.1 0.5 1 3 1 1 1.2 1.1 40 25 -- -- -- -- 4 4 1 1 1 5 -- mAdc mAdc MHz Unit Vdc Vdc Vdc pF s s s s s s s --
MJE13002 MJE13003
80 60 TJ = 150C hFE , DC CURRENT GAIN 40 30 20 - 55C 10 8 6 4 0.02 0.03 VCE = 2 V VCE = 5 V 0.2 0.3 0.5 0.7 0.05 0.07 0.1 IC, COLLECTOR CURRENT (AMP) 1 2 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2 TJ = 25C 1.6
1.2
IC = 0.1 A
0.3 A 0.5 A
1A
1.5 A
0.8
0.4
0 0.002 0.005 0.01
0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP)
0.5
1
2
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
1.4 VBE(sat) @ IC/IB = 3 VBE(on) @ VCE = 2 V V, VOLTAGE (VOLTS)
0.35 0.3 0.25 0.2 0.15 0.1 150C 0.05 0.5 0.7 1 2 0 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 25C IC/IB = 3 TJ = - 55C
1.2 V, VOLTAGE (VOLTS)
1
TJ = - 55C 25C 25C
0.8
0.6
150C
0.4 0.02 0.03
0.05 0.07 0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. Base-Emitter Voltage
Figure 4. Collector-Emitter Saturation Region
104 VCE = 250 V IC, COLLECTOR CURRENT ( A) 103 TJ = 150C 102 101 100 25C 10-1 - 0.4 REVERSE FORWARD 0 - 0.2 + 0.2 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) + 0.6 125C 100C 75C 50C C, CAPACITANCE (pF)
500 300 200 100 70 50 30 20 10 7 5 0.1 0.2 Cob 0.5 2 5 10 20 50 100 200 500 1000 1 VR, REVERSE VOLTAGE (VOLTS) Cib TJ = 25C
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJE13002 MJE13003
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
+5 V 1N4933 0.001 F 5V PW DUTY CYCLE 10% tr, tf 10 ns 68 1k +5 V 1N4933 0.02 F NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 CIRCUIT VALUES 270 47 100 1/2 W 1k 2N2905 MJE200 - VBE(off) VCC = 20 V Vclamp = 300 Vdc VCC = 125 V RC = 125 D1 = 1N5820 or Equiv. RB = 47 +10.3 V 25 s IB T.U.T. 5.1 k 51 - 4.0 V 2N2222 1k RB 33 MJE210 TEST CIRCUITS 33 1N4933 IC Vclamp *SELECTED FOR 1 kV VCE D1 RB VCC +125 V L MR826* TUT SCOPE RC
Coil Data: Ferroxcube Core #6656 Full Bobbin (~200 Turns) #20
GAP for 30 mH/2 A Lcoil = 50 mH OUTPUT WAVEFORMS
TEST WAVEFORMS
IC IC(pk)
tf CLAMPED t t1 tf t1 Adjusted to Obtain IC Lcoil (ICpk) t1 VCC t2 t t2 Lcoil (ICpk) Vclamp Test Equipment Scope-Tektronics 475 or Equivalent 0 - 8.5 V
VCE
VCE or Vclamp TIME
tr, tf < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC
ICPK 90% Vclamp IC tsv trv tc 10% Vclamp 90% IB1
Vclamp 90% IC tfi tti
VCE IB
10% ICPK
2% IC
TIME
Figure 7. Inductive Switching Measurements
4
IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII III I I I I I I IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII I III I I I I I II IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII IIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII IIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII IIIIIIIIIIIIIIII II IIII
Table 2. Typical Inductive Switching Performance
TC _C tsv s 1.3 1.6 1.5 1.7 1.8 3 trv s tfi s tti s IC AMP 0.5 1 tc s 25 100 25 100 25 100 0.23 0.26 0.10 0.13 0.07 0.08 0.30 0.30 0.14 0.26 0.10 0.22 0.35 0.40 0.05 0.06 0.05 0.08 0.30 0.36 0.16 0.29 0.16 0.28 1.5 NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1
Motorola Bipolar Power Transistor Device Data
MJE13002 MJE13003
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 - 90% Vclamp tfi = Current Fall Time, 90 - 10% IC tti = Current Tail, 10 - 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc)f In general, t rv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.
]
RESISTIVE SWITCHING PERFORMANCE
2 1 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 td @ VBE(off) = 5 V tr VCC = 125 V IC/IB = 5 TJ = 25C t, TIME ( s) 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.02 0.03 tf
ts
VCC = 125 V IC/IB = 5 TJ = 25C
0.05 0.07 0.1
0.2
0.3
0.5 0.7 10
20
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1 P(pk)
0.1 0.07 0.05 0.03 0.02
0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5
ZJC(t) = r(t) RJC RJC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)
t1
t2
DUTY CYCLE, D = t1/t2 100 200 500 1000
0.01 0.01
1 23 5 10 20 t, TIME OR PULSE WIDTH (ms)
50
Figure 10. Thermal Response
Motorola Bipolar Power Transistor Device Data
5
MJE13002 MJE13003
The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. 10 IC, COLLECTOR CURRENT (AMP) 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5 TC = 25C THERMAL LIMIT (SINGLE PULSE) BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO MJE13002 MJE13003 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc 5.0 ms 1.0 ms 100 s 10 s
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS
500
Figure 11. Active Region Safe Operating Area
1.6 IC, COLLECTOR CURRENT (AMP)
1.2 VBE(off) = 9 V MJE13002 MJE13003
0.8
TJ 100C IB1 = 1 A
0.4 5V 3V 0 0 100 200 300 1.5 V 400 500 600 700 800
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives RBSOA characteristics.
VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
Figure 12. Reverse Bias Safe Operating Area
1 SECOND BREAKDOWN DERATING
POWER DERATING FACTOR
0.8
0.6 THERMAL DERATING 0.4
0.2
0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (C)
Figure 13. Forward Bias Power Derating
6
Motorola Bipolar Power Transistor Device Data
MJE13002 MJE13003
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 77-08 TO-225AA TYPE ISSUE V
Motorola Bipolar Power Transistor Device Data
7
MJE13002 MJE13003
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8
Motorola Bipolar Power Transistor Device Data
*MJE13002/D*
MJE13002/D

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